STP689

    Simplified Description of Dielectric Reflectors

    Published: Jan 1979


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    Abstract

    The spectral reflectance, R(ω), of a quarter-wave reflector is quite asymmetric in general as a result of absorption. The maximum electric field E in an infinite stack is in the center of the high-index (low-index) layer at the low-frequency (high-frequency) end of the high-reflection band. Thus, the absorptance minimum of a stack having much greater absorption in the high-index material occurs at ω> ωc (band center). Operation at ω> ωc could increase the damage resistance if the high-index material is easily damaged. At ωc, E decays rapidly. As ω departs from ωc in an infinite reflector, E penetrates deeper into the coating, with no decay at the band edges. The peak-to-peak distance in an infinite dielectric stack is constant for all frequencies in the band. By using the continuity of E and dE/dz, E can be obtained from E= 0 at the metallic substrate or, in an infinite stack, from E=0 at the reflector surface for ω = ωC or E=0 in the center of the high- or lowindex layer at the band edges. Simple closed-form approximations for the spectral absorptance and the phase of E are accurate and sufficient for present applications.

    Keywords:

    Dielectric reflectors, spectral absorptance, reflectance, electricfield distribution, theory, asymmetric absorptance, high-power, damage thresholds


    Author Information:

    Sparks, M.
    Xonics, Incorporated Santa Monica, California

    Flannery, M.
    Xonics, Incorporated Santa Monica, California


    Paper ID: STP39126S

    Committee/Subcommittee: F01.02

    DOI: 10.1520/STP39126S


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