STP683: Radiation-Induced Segregation in Nickel-Silicon Alloys

    Rehn, LE
    Argonne National Laboratory, Argonne, Ill.

    Okamoto, PR
    Argonne National Laboratory, Argonne, Ill.

    Potter, DI
    Argonne National Laboratory, Argonne, Ill.

    Wiedersich, H
    Argonne National Laboratory, Argonne, Ill.

    Pages: 10    Published: Jan 1979


    Abstract

    Radiation-induced segregation was studied in a nickel 1 atomic percent silicon (Ni-1Si) alloy after irradiation at ∼525°C with 3-MeV58Ni+ ions. Postirradiation profiles of alloy composition as a function of depth from the irradiated surface were obtained by standard Auger techniques and ion-sputtering at room temperature. Rapid segregation of silicon toward the irradiated surface was observed. The solubility limit of silicon in nickel was reached at the surface after a dose of only 0.05 displacements per atom (dpa). Segregation continued to increase up to the highest dose (6.5 dpa) investigated. Precipitation of Ni3Si occurred at the external surface and internally on dislocation loops. The experimental results are compared with calculations using the Johnson-Lam segregation model and a set of parameters that was used previously to fit the temperature dependence of radiation-induced segregation in Ni-1Si.

    Keywords:

    radiation effects, mechanical properties, void swelling, nickel alloys, ion bombardment, radiation-induced segregation


    Paper ID: STP38165S

    Committee/Subcommittee: E10.07

    DOI: 10.1520/STP38165S


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