STP683: Microstructural Development During Low-Dose Irradiation

    Hall, BO
    Assistant physicist and metallurgist, Argonne National Laboratory, Argonne, Ill.

    Potter, DI
    Assistant physicist and metallurgist, Argonne National Laboratory, Argonne, Ill.

    Pages: 14    Published: Jan 1979


    Abstract

    Interstitial-impurity trapping has been included in a time-dependent nucleation and growth model that is used to calculate both vacancy and interstitial cluster densities and size distributions during irradiation. Calculations were performed for nickel alloys with interstitial-solute binding energies between 0 and 1 eV. Number densities of both types of cluster increased with increasing binding energy, with the interstitial cluster density more strongly affected. As binding energy increased, the time required for saturation of the interstitial cluster density increased.

    The model results were compared with interstitial-loop size distributions and number densities obtained by transmission electron microscopy (TEM) of Ni-4Si irradiated with 3.0-MeV Ni+ ions to doses ranging from 0.053 to 0.66 displacements per atom (dpa). The number densities were consistent with nickel-silicon binding energies of ∼0.25 eV, while the average sizes were compatible with higher binding energies.

    Keywords:

    impurity effects, interstitial trapping, nucleation, dislocation loops, irradiation microstructure


    Paper ID: STP38156S

    Committee/Subcommittee: E10.07

    DOI: 10.1520/STP38156S


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