STP799: A Review of 1064-nm Damage Tests of Electron-Beam Deposited Ta2O5/SiO2 Antireflection Coatings

    Milam, D
    Lawrence Livermore National Laboratories, Livermore, California

    Rainer, F
    Lawrence Livermore National Laboratories, Livermore, California

    Lowdermilk, WH
    Lawrence Livermore National Laboratories, Livermore, California

    Swain, J
    Lawrence Livermore National Laboratories, Livermore, California

    Carniglia, CK
    Lawrence Livermore National Laboratories, Livermore, California

    Tuttle Hart, T
    Lawrence Livermore National Laboratories, Livermore, California

    Pages: 5    Published: Jan 1983


    Abstract

    Damage tests of Ta2O5/SiO2 antireflection films deposited under a variety of conditions showed that thresholds of films deposited at 175 C were greater than thresholds of films deposited at either 250 C or 325 C. Deposition at high rate and low oxygen pressure produced highly absorptive films with low thresholds. Thresholds did not correlate with film reflectivity or net stress in the films, and correlated with film absorption only when the film absorption was greater than 104 ppm. Baking the films for four hours at 400 C reduced film absorption, altered net film stress, and produced an increase in the average damage threshold.

    Keywords:

    tantalum oxide, silicon dioxide, antireflection films, laser damage, net stress, film absorption, variations in film deposition parameters


    Paper ID: STP37269S

    Committee/Subcommittee: F01.02

    DOI: 10.1520/STP37269S


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