STP799

    Improving the Bulk Laser-Damage Resistance of KDP by Baking and Pulsed Laser Irradiation

    Published: Jan 1983


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    Abstract

    Isolated bulk damage centers are produced when KDP crystals are irradiated by 1-ns 1064-nm pulses. We have tested about 100 samples and find the median threshold to be 7 J/cm2 when the samples are irradiated only once at each test volume (1-on-1 tests). The median threshold increased to 11 J/cm2 when the test volumes were first subjected to subthreshold laser irradiation (n-on-1 tests). We baked several crystals at temperatures from 110 to 165°C and remeasured their thresholds. Baking increased thresholds in some crystals, but did not change thresholds of others. The median threshold of baked crystals ranged from 8 – 10 J/cm2 depending on the baking temperature. In crystals that had been baked, subthreshold irradiation produced a large change in the bulk damage threshold, and reduced the volume density of damage centers relative to the density observed in unbaked crystals. The data is summarized in the table.


    Author Information:

    Swain, JE
    Lawrence Livermore National Laboratory, Livermore, California

    Stokowski, SE
    Lawrence Livermore National Laboratory, Livermore, California

    Milam, D
    Lawrence Livermore National Laboratory, Livermore, California

    Rainer, F
    Lawrence Livermore National Laboratory, Livermore, California


    Paper ID: STP37234S

    Committee/Subcommittee: F01.02

    DOI: 10.1520/STP37234S


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