STP759: Band Structure Calculations of the Two-Photon Absorption Coefficients of GaAs, InP, CdTe, and ZnSe

    Vaidyanathan, A
    Air Force Weapons Laboratory, Kirtland Air Force Base, New Mexico

    Guenther, AH
    Air Force Weapons Laboratory, Kirtland Air Force Base, New Mexico

    Mitra, SS
    Air Force Weapons Laboratory, Kirtland Air Force Base, New Mexico

    Pages: 6    Published: Oct 1981


    Abstract

    The two-photon absorption coefficients of crystalline GaAs, InP, CdTe and ZnSe at 1.064 μm and 0.694 μm are calculated by means of a new model which combines the elements of second order perturbation thoery and band structure calculations. A sufficient number of intermediate states are included to assure adequate convergence. This calculational procedure is shown to represent a significant improvement over currently available theoretical models, and the results are in good agreement with available experimental data.

    Keywords:

    Two-photon absorption, nonlinear absorption, band-structure, oscillator strength


    Paper ID: STP37036S

    Committee/Subcommittee: F01.02

    DOI: 10.1520/STP37036S


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