STP759

    Ion-Beam Deposited Ge-As-Se Glass For Applications in the 1μ to 16μ Wavelength Region

    Published: Oct 1981


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    Abstract

    We have investigated application of Ge-As-Se glass as an optical coating material for use in the 1μ to 16μ wavelength region. Thin films of the material have demonstrated the following desirable characteristics: low absorption over the wavelength region of 1μ to 16μ; low inherent stress; amorphous, homogeneous structure. Laser damage tests have been performed at 1.06μ and 10.6μ. Interpretation and results of the damage tests are discussed. The films are robust and resistant to attack by HF.

    The deposition technique employed ion beams to pre-clean the substrate and to deposit the Ge-As-Se material. Deposition was a hybrid process, with coating material initially being sputtered by the ion beam and subsequently being generated thermally due to target heating by the ion beam. Thus the advantages of sputter deposition are realized during initial stages of film growth, and faster deposition rates can then be achieved using thermal generation. Films of Ge-As-Se in excess of 100μ thick have been easily deposited, and a variety of materials has been used as substrates. This same sputter-thermal technique has been applied to other thin film materials.

    Keywords:

    Ion beam, sputtering, chalcogenide glass, coating


    Author Information:

    Herrmann, WC
    Optic-Electronic Corporation, Dallas, Texas

    McNeil, JR
    Optic-Electronic Corporation, Dallas, Texas


    Paper ID: STP37024S

    Committee/Subcommittee: F01.02

    DOI: 10.1520/STP37024S


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