STP759

    Multithreshold HF/DF Pulsed Laser Damage Measurements on Evaporated and Sputtered Silicon Films

    Published: Oct 1981


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    Abstract

    Previously, we reported a comparison of damage resistance of various coating materials deposited by vacuum evaporation and measured at 2.7 and 3.8 μm. It was found that Si films fail by a thermal process and, in agreement with other studies, that high-index materials, such as Si, tend to have lower thresholds than low-index dielectric materials, such as NaF, Al2O3, and SiOx, which by comparison are relatively outstanding performers. In this paper, we report results of tests which show that the thresholds of magnetron-deposited sputtered Si films are enhanced over those deposited by vacuum evaporation. The sputtering process leads to lower hydrogen impurity content (100 ppm vs 200 ppm), lower absorption (20 cm−1 vs 40 cm−1), and a factor of two or more enhancement in damage threshold over vacuum-evaporated Si films. Further improvement may be possible by optimization of the sputter-deposition parameters.

    Keywords:

    Absorption, evaporation, hydrogen and oxygen impurity, magnetron sputtering, pulsed HF/DF laser damage thresholds, silicon films


    Author Information:

    Donovan, TM
    Michelson Laboratory, Physics Division, Naval Weapons Center, China Lake, California

    Porteus, JO
    Michelson Laboratory, Physics Division, Naval Weapons Center, China Lake, California

    Seitel, SC
    Michelson Laboratory, Physics Division, Naval Weapons Center, China Lake, California

    Kraatz, P
    Michelson Laboratory, Physics Division, Naval Weapons Center, China Lake, California


    Paper ID: STP37022S

    Committee/Subcommittee: F01.02

    DOI: 10.1520/STP37022S


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