STP759: Epitaxial Regrowth and Defects in Laser Irradiated Single Crystal Ni

    Draper, CW
    Western Electric Engineering Research Center, Princeton, New Jersey

    Buene, L
    Western Electric Engineering Research Center, Princeton, New Jersey

    Jacobson, DC
    Western Electric Engineering Research Center, Princeton, New Jersey

    Poate, JM
    Western Electric Engineering Research Center, Princeton, New Jersey

    Nakahara, S
    Western Electric Engineering Research Center, Princeton, New Jersey

    Pages: 5    Published: Oct 1981


    Abstract

    We have used Q-switched Nd:YAG irradiation to melt surface layers of metallic single crystal nickel. The quality of the epitaxially regrown layers has been determined by Rutherford backscattering and channeling as well as by TEM. TEM shows a high density of extended defects (dislocation tangles and walls). We have also observed significant differences between irradiated <100> and <111> crystals cut from the same Ni boule. One explanation for the orientation dependence is that slip occurs more easily in 111 planes of fcc structures and consequently there is a higher density of defect nucleation centers for 111 liquid phase regrowth.

    Keywords:

    Defects, epitaxial regrowth, laser irradiation, liquid phase, single crystal


    Paper ID: STP37012S

    Committee/Subcommittee: F01.02

    DOI: 10.1520/STP37012S


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