You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.


    Measurement of Ion Implantation Doses in Silicon by Ellipsometry and Spectral Reflectance

    Published: Jan 1983

      Format Pages Price  
    PDF (328K) 25 $25   ADD TO CART
    Complete Source PDF (9.3M) 25 $66   ADD TO CART


    Results of ellipsometric measurements are presented for arsenic implants in silicon at doses from 2 × 1013 to 8 × 1015 cm−2 and energies from 30 to 180 keV. For implanters which mechanically scan wafers through the ion beam, it is possible to construct curves relating ellipsometric parameters to implant parameters. Reproducible ellipsometric results are strongly dependent on wafer preparation and precise setting and control of implant energies. Spectral reflectance measurements of implanted samples show that this method may be also used for implant monitoring.


    silicon wafer, ion implantation, dose measurements, ellipsometric measurements, spectral reflectance, arsenic implants in silicon

    Author Information:

    Hochberg, AK
    TRW LSI Products, La Jolla, Calif.

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36189S

    CrossRef ASTM International is a member of CrossRef.