SEDL / STP / STP804-EB / STP36185S

Determination of Oxygen Concentration in Silicon by Infrared Absorption

Abe, T
R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken,

Gotoh, S
R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken,

Ozawa, N
R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken,

Masui, T
R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken,

Pages: 8    Published: Jan 1983

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Abstract

Infrared absorption measurement and activation analyses were carried out for various CZ crystals with different oxygen concentrations. Data for infrared (IR) absorption were found to vary depending upon various factors such as wafer thickness and surface finishing. Under well-defined experimental conditions, however, an accurate linear correlation between the IR absorption and oxygen concentration measured by activation analysis was obtained: 6.0 × absorption coefficient = oxygen concentration in parts per million atomic (ppma).