STP804

    Determination of Oxygen Concentration in Silicon by Infrared Absorption

    Published: Jan 1983


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    Abstract

    Infrared absorption measurement and activation analyses were carried out for various CZ crystals with different oxygen concentrations. Data for infrared (IR) absorption were found to vary depending upon various factors such as wafer thickness and surface finishing. Under well-defined experimental conditions, however, an accurate linear correlation between the IR absorption and oxygen concentration measured by activation analysis was obtained: 6.0 × absorption coefficient = oxygen concentration in parts per million atomic (ppma).

    Keywords:

    oxygen concentration, infrared absorption, charged particle activation analysis, absorption coefficient, interstitial oxygen, difference method


    Author Information:

    Abe, T
    R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken,

    Gotoh, S
    R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken,

    Ozawa, N
    R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken,

    Masui, T
    R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken,


    Paper ID: STP36185S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36185S


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