Analysis of Infrared Spectra for Oxygen Measurements in Silicon

SEDL / STP / STP804-EB / STP36184S

Analysis of Infrared Spectra for Oxygen Measurements in Silicon

Graupner, RK
Wacker Siltronic Corporation, Portland, Ore.

Pages: 10 Published: Jan 1983

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Abstract

The effect of multiple reflections when analyzing the infrared spectra for oxygen measurements in silicon wafers is important. It may cause errors up to 20% when ignored. The procedure and calculations to derive oxygen concentration from the spectra by taking into account this effect is described in detail. The effect of back-surface finish on the measurements is also discussed.

Keywords:
Oxygen concentration in silicon, silicon wafers, multiple reflection, infrared spectra, absorption coefficient, back-surface finish

Paper ID: STP36184S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP36184S

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