|
Analysis of Infrared Spectra for Oxygen Measurements in Silicon Pages: 10 Published: Jan 1983
Download this paper for $25
PDF (128K)
View License Agreement Source: STP804-EB Abstract The effect of multiple reflections when analyzing the infrared spectra for oxygen measurements in silicon wafers is important. It may cause errors up to 20% when ignored. The procedure and calculations to derive oxygen concentration from the spectra by taking into account this effect is described in detail. The effect of back-surface finish on the measurements is also discussed. Keywords: Oxygen concentration in silicon, silicon wafers, multiple reflection, infrared spectra, absorption coefficient, back-surface finish Paper ID: STP36184S Committee/Subcommittee: F01.06 DOI: 10.1520/STP36184S ASTM International is a member of CrossRef. | ||