SYMPOSIA PAPER Published: 01 January 1983
STP36184S

Analysis of Infrared Spectra for Oxygen Measurements in Silicon

Source

The effect of multiple reflections when analyzing the infrared spectra for oxygen measurements in silicon wafers is important. It may cause errors up to 20% when ignored. The procedure and calculations to derive oxygen concentration from the spectra by taking into account this effect is described in detail. The effect of back-surface finish on the measurements is also discussed.

Author Information

Graupner, RK
Wacker Siltronic Corporation, Portland, Ore.
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Details
Developed by Committee: F01
Pages: 459–468
DOI: 10.1520/STP36184S
ISBN-EB: 978-0-8031-4871-0
ISBN-13: 978-0-8031-0243-9