SEDL / STP / STP804-EB / STP36182S


Characterizing Process Nonuniformities on Large-Diameter Wafers: An Overview

Perloff, DS
Signetics Corporation, Sunnyvale, Calif.
PROMETRIX Corp., Sunnyvale, Calif.


Pages: 23    Published: Jan 1983


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Abstract

An overview is presented of the techniques available for characterizing process nonuniformities on large-diameter wafers. Examples are given of the use of two-dimensional and three-dimensional mapping techniques for displaying within-wafer variability, and of relative and cumulative frequency plots for representing process tolerances. Two new display methods are recommended for dealing with small data sets: minicontour maps and folded-axis cumulative frequency plots.


Keywords:
resistivity characterization, nonuniformities, silicon wafers, large-diameter wafers, ion implantation, resistivity mapping, two-dimensional maps, three-dimensional maps, contour maps, frequency plots

Paper ID: STP36182S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP36182S
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