STP804

    Characterizing Process Nonuniformities on Large-Diameter Wafers: An Overview

    Published: Jan 1983


      Format Pages Price  
    PDF (612K) 23 $25   ADD TO CART
    Complete Source PDF (9.3M) 23 $66   ADD TO CART


    Abstract

    An overview is presented of the techniques available for characterizing process nonuniformities on large-diameter wafers. Examples are given of the use of two-dimensional and three-dimensional mapping techniques for displaying within-wafer variability, and of relative and cumulative frequency plots for representing process tolerances. Two new display methods are recommended for dealing with small data sets: minicontour maps and folded-axis cumulative frequency plots.

    Keywords:

    resistivity characterization, nonuniformities, silicon wafers, large-diameter wafers, ion implantation, resistivity mapping, two-dimensional maps, three-dimensional maps, contour maps, frequency plots


    Author Information:

    Perloff, DS
    Signetics Corporation, Sunnyvale, Calif.

    PROMETRIX Corp., Sunnyvale, Calif.


    Paper ID: STP36182S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36182S


    CrossRef ASTM International is a member of CrossRef.