STP804: Computer-Aided Process Modeling for Design and Process Control

    Dutton, RW
    Stanford University, Stanford, Calif.

    Fahey, P
    Stanford University, Stanford, Calif.

    Doganis, K
    Xerox Corporation, Palo Alto Research Center, Palo Alto, Calif.

    Mei, L
    Fairchild Research and Development Laboratory, Palo Alto, Calif.

    Lee, HG
    Hewlett-Packard Corporation, Cupertino, Calif.

    Pages: 15    Published: Jan 1983


    Abstract

    The use of computer aids for process modeling has grown rapidly over the past five years. Currently, industrial organizations are simulating thousands of process steps each month, both to cut development costs and to create more reproducible results. This paper will review recent progress in the field of process modeling and show typical applications. Both the design and process control aspects of modeling will be discussed.

    Keywords:

    process modeling, device simulation, integrated circuits, N-channel metal-oxide-semiconductor (NMOS), depletion load, phosphorus, polysilicon, diffusion


    Paper ID: STP36181S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36181S


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