Digital Library / STP / STP804-EB / STP36178S


Oxygen Precipitation Studies at Various Impurity Levels Using Thermal Donor Activation

Allison, JC
National Semiconductor CorporationWacker Chemitronic,Calif.,

Maxwell, OF
National Semiconductor CorporationWacker Chemitronic,Calif.,

Schindler, R
National Semiconductor CorporationWacker Chemitronic,Calif.,

Domenici, M
Dynamit Nobel Silicon, S.P.A.,


Pages: 7    Published: Jan 1983


Download this paper for $25 PDF (160K)          View License Agreement
        Click here to download the complete source publication for $66 PDF (9.2M)


Source: STP804-EB


Abstract

Thermal donor activation and related intrinsic pn-junctions are used to characterize outdiffusion and precipitation of oxygen in silicon wafers. It is found that the depth of the p-layers and the depth of the denuded zones do not coincide. Both are found to depend on the wafer position within the crystal and are not solely related to the oxygen content.


Keywords:
thermal donor, carbon, oxygen, denuded zone

Paper ID: STP36178S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP36178S
CrossRef ASTM International is a member of CrossRef.