STP804: Oxygen Precipitation Studies at Various Impurity Levels Using Thermal Donor Activation

    Allison, JC
    National Semiconductor CorporationWacker Chemitronic, Santa ClaraBurghausen, Calif.

    Maxwell, OF
    National Semiconductor CorporationWacker Chemitronic, Santa ClaraBurghausen, Calif.

    Schindler, R
    National Semiconductor CorporationWacker Chemitronic, Santa ClaraBurghausen, Calif.

    Domenici, M
    Dynamit Nobel Silicon, S.P.A., Novara,

    Pages: 7    Published: Jan 1983


    Abstract

    Thermal donor activation and related intrinsic pn-junctions are used to characterize outdiffusion and precipitation of oxygen in silicon wafers. It is found that the depth of the p-layers and the depth of the denuded zones do not coincide. Both are found to depend on the wafer position within the crystal and are not solely related to the oxygen content.

    Keywords:

    thermal donor, carbon, oxygen, denuded zone


    Paper ID: STP36178S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36178S


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