SYMPOSIA PAPER Published: 01 January 1983
STP36178S

Oxygen Precipitation Studies at Various Impurity Levels Using Thermal Donor Activation

Source

Thermal donor activation and related intrinsic pn-junctions are used to characterize outdiffusion and precipitation of oxygen in silicon wafers. It is found that the depth of the p-layers and the depth of the denuded zones do not coincide. Both are found to depend on the wafer position within the crystal and are not solely related to the oxygen content.

Author Information

Allison, JC
Wacker Chemitronic, Burghausen, Calif., W. Germany
Maxwell, OF
Wacker Chemitronic, Burghausen, Calif., W. Germany
Schindler, R
Wacker Chemitronic, Burghausen, Calif., W. Germany
Domenici, M
Dynamit Nobel Silicon, S.P.A., Novara, Italy
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Details
Developed by Committee: F01
Pages: 362–368
DOI: 10.1520/STP36178S
ISBN-EB: 978-0-8031-4871-0
ISBN-13: 978-0-8031-0243-9