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Oxygen Precipitation Studies at Various Impurity Levels Using Thermal Donor Activation Pages: 7 Published: Jan 1983
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View License Agreement Source: STP804-EB Abstract Thermal donor activation and related intrinsic pn-junctions are used to characterize outdiffusion and precipitation of oxygen in silicon wafers. It is found that the depth of the p-layers and the depth of the denuded zones do not coincide. Both are found to depend on the wafer position within the crystal and are not solely related to the oxygen content. Keywords: thermal donor, carbon, oxygen, denuded zone Paper ID: STP36178S Committee/Subcommittee: F01.06 DOI: 10.1520/STP36178S ASTM International is a member of CrossRef. | ||