STP804

    Material Defect Factors Affecting MOS Device Performance

    Published: Jan 1983


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    Abstract

    Substrate-related defects that affect MOS yield center around either bulk impurities and precipitates or surface contamination. Uncontrolled bulk defects can cause significant refresh or leakage problems, but it has been shown that with proper processing the defects can form the basis for internal gettering that improves production performance. Surface-related yield problems reflect a joint responsibility of the wafer producer and the user, since residues, particularly organics, may also cause device performance problems. Control of these problems requires a careful analysis of all chemicals used in processing and cleaning the wafer prior to oxidations.

    Keywords:

    carbon, contamination, crystal, denuding, dynamic RAMs, gettering, internal gettering, laser gettering, leakage, MOS, nucleation, oxide, oxygen, oxygen donors, oxygen gettering, precipitation, refresh time, silicon, stacking faults, surface


    Author Information:

    Matlock, JH
    Manager, Materials Technology Group, UTC/Mostek Corporation, Carrollton, Tex.


    Paper ID: STP36177S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36177S


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