SYMPOSIA PAPER Published: 01 January 1983
STP36173S

Dependence of Thin-Gate Oxide Properties on Processing

Source

Thin-gate oxides (23 nm or less) will be very important for future very-large-scale-integration (VLSI) circuits. Oxides in this thickness range can be grown in different environments and temperatures. Breakdown, interface properties, and electron and hole trapping are affected by the growth conditions. The effect of growth and anneal temperature on insulator and interface properties will be examined. Such information is useful in optimizing process conditions for the long-term reliability of thin-gate oxides.

Author Information

Lai, SK
Intel Corporation, Santa Clara, Calif.
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Details
Developed by Committee: F01
Pages: 260–272
DOI: 10.1520/STP36173S
ISBN-EB: 978-0-8031-4871-0
ISBN-13: 978-0-8031-0243-9