Dependence of Thin Gate Oxide Properties on Processing

SEDL / STP / STP804-EB / STP36173S

Dependence of Thin-Gate Oxide Properties on Processing

Lai, SK
Intel Corporation, Santa Clara, Calif.

Pages: 13 Published: Jan 1983

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Abstract

Thin-gate oxides (23 nm or less) will be very important for future very-large-scale-integration (VLSI) circuits. Oxides in this thickness range can be grown in different environments and temperatures. Breakdown, interface properties, and electron and hole trapping are affected by the growth conditions. The effect of growth and anneal temperature on insulator and interface properties will be examined. Such information is useful in optimizing process conditions for the long-term reliability of thin-gate oxides.

Keywords:
silicon dioxide, electrical breakdown, electron traps, hole traps, radiation damage, interface traps

Paper ID: STP36173S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP36173S

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