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Reduced-Pressure Chemical Vapor Deposition of Polycrystalline Silicon
Hammond, ML
Vice President, Technical Director, TETRON Inc., Calif.

Pages: 12    Published: Jan 1983

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Source: STP804-EB

Abstract

The practice of depositing polycrystalline silicon by low-pressure chemical vapor deposition (LPCVD) is discussed in terms of effect of deposition parameters on structural property relationships. Electrical and oxidation properties are also discussed.

Keywords:
polycrystalline silicon, integrated circuits, interconnects, chemical vapor deposition, low-pressure chemical vapor deposition, reduced-pressure chemical vapor deposition

Paper ID: STP36168S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP36168S
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