SYMPOSIA PAPER Published: 01 January 1983
STP36168S

Reduced-Pressure Chemical Vapor Deposition of Polycrystalline Silicon

Source

The practice of depositing polycrystalline silicon by low-pressure chemical vapor deposition (LPCVD) is discussed in terms of effect of deposition parameters on structural property relationships. Electrical and oxidation properties are also discussed.

Author Information

Hammond, ML
TETRON Inc., Cupertino, Calif.
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Details
Developed by Committee: F01
Pages: 206–217
DOI: 10.1520/STP36168S
ISBN-EB: 978-0-8031-4871-0
ISBN-13: 978-0-8031-0243-9