SYMPOSIA PAPER Published: 01 January 1983
STP36165S

Modeling and Applications of Silicon Epitaxy

Source

Demands for low-temperature, defect-free, thin silicon epitaxial films have produced significant progress in process modeling and process design. This review paper discusses recent developments with new additional data, with an emphasis on autodoping, defect control, and process-device interactions, as they relate to bipolar applications. A brief discussion of a low-temperature epitaxial process is provided, and calculations are presented to illustrate the advantages of low epitaxial temperatures in terms of profile tolerance and device performance.

Author Information

Srinivasan, GR
General Technology Division, IBM Corporation, East Fishkill Facility, Hopewell Junction, N.Y.
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Details
Developed by Committee: F01
Pages: 151–173
DOI: 10.1520/STP36165S
ISBN-EB: 978-0-8031-4871-0
ISBN-13: 978-0-8031-0243-9