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Epitaxy: An Introspective Review Pages: 4 Published: Jan 1983
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View License Agreement Source: STP804-EB Abstract The evolution of reactor design and gas control techniques for the deposition of silicon epitaxial layers is described. An approach to controlling a large epi factory with digital electronics is discussed. From the viewpoint of ever-growing technology and quality requirements, the present approach is to furnish the options for an automatic operation in an individual reactor. Keywords: silicon epitaxy, epi facility, DDC system, horizontal reactor, vertical reactor, barrel reactor Paper ID: STP36164S Committee/Subcommittee: F01.06 DOI: 10.1520/STP36164S ASTM International is a member of CrossRef. | ||