SEDL / STP / STP804-EB / STP36164S



Epitaxy: An Introspective Review

Williams, JH
Manager, Materials Development, Motorola Inc., Tempe, Ariz


Pages: 4    Published: Jan 1983


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Abstract

The evolution of reactor design and gas control techniques for the deposition of silicon epitaxial layers is described. An approach to controlling a large epi factory with digital electronics is discussed. From the viewpoint of ever-growing technology and quality requirements, the present approach is to furnish the options for an automatic operation in an individual reactor.


Keywords:
silicon epitaxy, epi facility, DDC system, horizontal reactor, vertical reactor, barrel reactor

Paper ID: STP36164S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP36164S
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