STP804

    Epitaxy: An Introspective Review

    Published: Jan 1983


      Format Pages Price  
    PDF Version (64K) 4 $25   ADD TO CART
    Complete Source PDF (9.3M) 4 $66   ADD TO CART


    Abstract

    The evolution of reactor design and gas control techniques for the deposition of silicon epitaxial layers is described. An approach to controlling a large epi factory with digital electronics is discussed. From the viewpoint of ever-growing technology and quality requirements, the present approach is to furnish the options for an automatic operation in an individual reactor.

    Keywords:

    silicon epitaxy, epi facility, DDC system, horizontal reactor, vertical reactor, barrel reactor


    Author Information:

    Williams, JH
    Manager, Materials Development, Motorola Inc., Tempe, Ariz


    Paper ID: STP36164S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36164S


    CrossRef ASTM International is a member of CrossRef.