STP804: Epitaxy: An Introspective Review

    Williams, JH
    Manager, Materials Development, Motorola Inc., Tempe, Ariz

    Pages: 4    Published: Jan 1983


    The evolution of reactor design and gas control techniques for the deposition of silicon epitaxial layers is described. An approach to controlling a large epi factory with digital electronics is discussed. From the viewpoint of ever-growing technology and quality requirements, the present approach is to furnish the options for an automatic operation in an individual reactor.


    silicon epitaxy, epi facility, DDC system, horizontal reactor, vertical reactor, barrel reactor

    Paper ID: STP36164S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36164S

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