STP804

    Large-Diameter Czochralski Silicon Crystal Growth

    Published: Jan 1983


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    Abstract

    Some practical aspects of the engineering and science of large-diameter crystal growth are presented. Growth characteristics and problems associated with thermal stress and crystal shape are discussed. Oxygen distribution in the melt and its incorporation into the crytal are investigated. Finally, a double-crucible technique is presented and its application to N+ silicon growth is discussed.

    Keywords:

    silicon, crystal growth, Czochralski growth, large-diameter silicon, oxygen in crystals, double-crucible technique


    Author Information:

    Lin, W
    Member of Technical Staff, Semiconductor Materials Group, Bell Laboratories, Allentown, Pa.

    Hill, DW
    Member of Technical Staff, Semiconductor Materials Group, Bell Laboratories, Allentown, Pa.


    Paper ID: STP36157S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36157S


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