SYMPOSIA PAPER Published: 01 January 1983
STP36157S

Large-Diameter Czochralski Silicon Crystal Growth

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Some practical aspects of the engineering and science of large-diameter crystal growth are presented. Growth characteristics and problems associated with thermal stress and crystal shape are discussed. Oxygen distribution in the melt and its incorporation into the crytal are investigated. Finally, a double-crucible technique is presented and its application to N+ silicon growth is discussed.

Author Information

Lin, W
Semiconductor Materials Group, Bell Laboratories, Allentown, Pa.
Hill, DW
Semiconductor Materials Group, Bell Laboratories, Allentown, Pa.
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Details
Developed by Committee: F01
Pages: 24–38
DOI: 10.1520/STP36157S
ISBN-EB: 978-0-8031-4871-0
ISBN-13: 978-0-8031-0243-9