STP712

    Laser Scanning Technique for the Investigation of Power Devices

    Published: Jan 1980


      Format Pages Price  
    PDF Version (252K) 12 $25   ADD TO CART
    Complete Source PDF (3.6M) 12 $55   ADD TO CART


    Abstract

    A measurement technique in which inhomogeneities in lifetime or resistivity or both in large-area semiconductor p-n devices can be visualized, is described. The method utilizes a light spot that is scanned across the device area. By using a double-pass method in which the beam is scanned twice for two different bias voltages, the influence of the surface is eliminated. Absolute values of minority carrier diffusion lengths can be obtained by using a red (0.63-μm) and an infrared (1.15-μm) heliumneon laser in combination. Illuminating the specimen with light of 0.63-μm wavelength and measuring the photocurrent as a function of the space charge region width yields the diffusion length for holes in the n region. Using light of 1.15-μm wavelength in the same type of measurement yields the diffusion length of electrons in the p+ region.

    Keywords:

    semiconductor devices, diffusion (length), optical properties, optical equipment, electrical properties, semiconductor junctions, laser beams, silicon


    Author Information:

    Engström, O
    RIFA AB, Integrated Circuits Division, Spånga,

    Drugge, B
    ASEA AB, Central Research and Development Department, Västerås,

    Tove, PA
    Institute of Technology, University of Uppsala, Uppsala,


    Paper ID: STP35141S

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP35141S


    CrossRef ASTM International is a member of CrossRef.