SYMPOSIA PAPER Published: 01 January 1980
STP35140S

A Contactless Method of Junction Leakage Testing and Comparison of Associated Data with Contact-Determined Leakage

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A contactless p-n junction leakage measurement method is described, which uses specialized very-high-frequency oscillator circuitry. This circuitry utilizes the eddy current loading effect, via inductive coupling, in order to determine the leakage-dependent decay time of the photoinduced voltage across the diffused p-n junctions in a silicon wafer.

The contactless measurement is made under low forward bias conditions (≤ 10 mV), in such a way that this measurement and the contacting reverse leakage, measured at 100 mV, will both be functions of generation-recombination processes in the junction depletion region. Detectable signals were made possible by low-noise circuitry and by the increase in junction eddy currents from induced voltages across the diffused regions.

The following model was derived from basic circuit theory, which relates the contactless decay time measurement, τ, to the conventional contacting reverse leakage, J0 J0=CkT

where

J0 = reverse leakage, A/cm2,

C = junction capacitance, F/cm2,

τ = decay time, s, and

kT/q = 26 mV at T = 300 K.

Good agreement was obtained between experiment and theory. The examined range was four orders of magnitude in leakage current.

Author Information

Verkuil, RL
IBM Data Systems Division, Hopewell Junction, N.Y.
Pak, MS
IBM Data Systems Division, Hopewell Junction, N.Y.
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Details
Developed by Committee: F01
Pages: 225–238
DOI: 10.1520/STP35140S
ISBN-EB: 978-0-8031-4780-5
ISBN-13: 978-0-8031-0390-0