STP712

    Lifetime Depth Profile Measurement Method in Heavily Doped Semiconductors Using Electron Beams

    Published: Jan 1980


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    Abstract

    A method for depth profiling the minority carrier lifetime of heavily doped semiconductors is described. The technique utilizes an electron beam to generate electron hole pairs as a function of depth. By utilizing an exact numerical model for the semiconductor current flow equations, the minority carrier lifetime as a function of depth can be determined.

    Keywords:

    minority carrier lifetime, electron beam, auger recombination, band gap narrowing, bipolar, transistors, silicon


    Author Information:

    Possin, GE
    Physicist, Electronic Materials Branch, Corporate Research and Development, General Electric Co., Schenectady, N.Y.

    Adler, MS
    Manager, Device Physics Unit, Power Semiconductor Branch, Corporate Research and Development, General Electric Co., Schenectady, N.Y.

    Baliga, BJ
    Electrical engineer, Power Semiconductor Branch, Corporate Research and Development, General Electric Co., Schenectady, N.Y.


    Paper ID: STP35138S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP35138S


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