SYMPOSIA PAPER Published: 01 January 1980
STP35137S

Radial Lifetime Profiling on Silicon Specimens by the Photoconductivity Decay and Photocurrent Methods—A Comparison

Source

Radial profiles of the minority carrier lifetime of silicon specimens, obtained by the photoconductivity decay (PCD) method and the photocurrent method have been compared. The photocurrent method used on slices gives more or less the same spatial resolution as a modified PCD setup reported by Graff, used on cross-sectional bars. Some problems occur when the photocurrent method is applied to p-type silicon samples.

For each of the methods a typical application exists: the photocurrent method is an important and relatively easy-to-handle tool for the investigation of the lifetime behavior of silicon wafers during the heat treatment and oxidation process, and the PCD method enables a very fast test of the lifetime (and lifetime profiles) to be made on the starting ingot material.

Author Information

Vieweg-Gutberlet, FG
Wacker Chemitronic, Burghausen, West Germany
Siegesleitner, PF
Wacker Chemitronic, Burghausen, West Germany
Stallhofer, M
Wacker Chemitronic, Burghausen, West Germany
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Developed by Committee: F01
Pages: 183–191
DOI: 10.1520/STP35137S
ISBN-EB: 978-0-8031-4780-5
ISBN-13: 978-0-8031-0390-0