SEDL / STP / STP712-EB / STP35132S

Control of Lifetime in Silicon by Implantation of Iron

Mamine, T
Research engineer, research engineer, and manager, Sony Corporation, Semiconductor Development Division, Atsugi,

Hayashi, H
Research engineer, research engineer, and manager, Sony Corporation, Semiconductor Development Division, Atsugi,

Matsushita, T
Research engineer, research engineer, and manager, Sony Corporation, Semiconductor Development Division, Atsugi,

Yanada, T
Research scientists, Sony Corporation Research Center, Yokohama,

Kumagai, O
Research scientists, Sony Corporation Research Center, Yokohama,

Nishiyama, K
Research scientists, Sony Corporation Research Center, Yokohama,

Kaneko, K
Senior research scientist, Sony Corporation Research Center, Yokohama,

Pages: 17    Published: Jan 1980

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Abstract

The hole lifetime in n-type silicon could be reduced by the implantation of iron in a well-controlled manner. By choosing a suitable dose and annealing temperature, a nearly temperature-independent hole lifetime was obtained. The temperature dependence of the hole lifetime was analyzed by the Shockley-Read-Hall theory, and we found that two types of recombination centers,—that is, a process-induced center and an iron-implanted center,—were responsible for the recombination. The energy level, the capture cross section, and the charge state of these centers were determined by deep-level transient spectroscopy (DLTS) and by compensation effect. We applied the method of iron implantation to fast-switching diodes and gate-controlled switches (GCSs) and demonstrated that iron offered improved high-temperature properties when applied to switching devices.