SYMPOSIA PAPER Published: 01 January 1980
STP35132S

Control of Lifetime in Silicon by Implantation of Iron

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The hole lifetime in n-type silicon could be reduced by the implantation of iron in a well-controlled manner. By choosing a suitable dose and annealing temperature, a nearly temperature-independent hole lifetime was obtained. The temperature dependence of the hole lifetime was analyzed by the Shockley-Read-Hall theory, and we found that two types of recombination centers,—that is, a process-induced center and an iron-implanted center,—were responsible for the recombination. The energy level, the capture cross section, and the charge state of these centers were determined by deep-level transient spectroscopy (DLTS) and by compensation effect. We applied the method of iron implantation to fast-switching diodes and gate-controlled switches (GCSs) and demonstrated that iron offered improved high-temperature properties when applied to switching devices.

Author Information

Mamine, T
Sony Corporation, Semiconductor Development Division, Atsugi, Japan
Hayashi, H
Sony Corporation, Semiconductor Development Division, Atsugi, Japan
Matsushita, T
Sony Corporation, Semiconductor Development Division, Atsugi, Japan
Yanada, T
Sony Corporation Research Center, Yokohama, Japan
Kumagai, O
Sony Corporation Research Center, Yokohama, Japan
Nishiyama, K
Sony Corporation Research Center, Yokohama, Japan
Kaneko, K
Sony Corporation Research Center, Yokohama, Japan
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Details
Developed by Committee: F01
Pages: 119–135
DOI: 10.1520/STP35132S
ISBN-EB: 978-0-8031-4780-5
ISBN-13: 978-0-8031-0390-0