STP712

    Control of Lifetime in Silicon by Implantation of Iron

    Published: Jan 1980


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    Abstract

    The hole lifetime in n-type silicon could be reduced by the implantation of iron in a well-controlled manner. By choosing a suitable dose and annealing temperature, a nearly temperature-independent hole lifetime was obtained. The temperature dependence of the hole lifetime was analyzed by the Shockley-Read-Hall theory, and we found that two types of recombination centers,—that is, a process-induced center and an iron-implanted center,—were responsible for the recombination. The energy level, the capture cross section, and the charge state of these centers were determined by deep-level transient spectroscopy (DLTS) and by compensation effect. We applied the method of iron implantation to fast-switching diodes and gate-controlled switches (GCSs) and demonstrated that iron offered improved high-temperature properties when applied to switching devices.

    Keywords:

    silicon, lifetime, deep-level transient spectroscopy (DLTS), iron, vacancy, ion implantation, switching device


    Author Information:

    Mamine, T
    Research engineer, research engineer, and manager, Sony Corporation, Semiconductor Development Division, Atsugi,

    Hayashi, H
    Research engineer, research engineer, and manager, Sony Corporation, Semiconductor Development Division, Atsugi,

    Matsushita, T
    Research engineer, research engineer, and manager, Sony Corporation, Semiconductor Development Division, Atsugi,

    Yanada, T
    Research scientists, Sony Corporation Research Center, Yokohama,

    Kumagai, O
    Research scientists, Sony Corporation Research Center, Yokohama,

    Nishiyama, K
    Research scientists, Sony Corporation Research Center, Yokohama,

    Kaneko, K
    Senior research scientist, Sony Corporation Research Center, Yokohama,


    Paper ID: STP35132S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP35132S


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