STP712: Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors

    Ichida, Y
    Research scientists, Silicon Technology Laboratory, Sony Corporation Research Center, Yokohama,

    Yanada, T
    Research scientists, Silicon Technology Laboratory, Sony Corporation Research Center, Yokohama,

    Kawado, S
    Research scientists, Silicon Technology Laboratory, Sony Corporation Research Center, Yokohama,

    Pages: 12    Published: Jan 1980


    Abstract

    The gettering effect of phosphorus diffusion to the back surface of a silicon wafer on oxidation-induced stacking faults has been studied by evaluating the generation lifetime from the transient response of metal oxide semiconductor (MOS) capacitors. The generation lifetime of wafers subjected to postoxidation phosphorus diffusion gettering is not remarkably decreased by the presence of stacking faults. On the other hand, the generation lifetime of waters subjected to preoxidation gettering is decreased by two orders of magnitude because of the presence of stacking faults. The result is explained by impurity precipitation to Frank partial dislocations bounding stacking faults.

    Keywords:

    silicon, metal oxide semiconductor (MOS), metal oxide semiconductor (MOS) capacitor, transient response, generation lifetime, phosphorus diffusion, gettering, oxidation, electrical activity, perfect dislocation, stacking fault, Frank partial dislocation, fault plane, impurity precipitation, silicon


    Paper ID: STP35131S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP35131S


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