STP712: Effects of Carrier Lifetime and End-Region Recombination on the Forward Current and Switching Behavior of Power Pin Diodes

    Cooper, RW
    Senior physicists, Philips Research Laboratories, Redhill, Surrey,

    Fagg, S
    Senior physicists, Philips Research Laboratories, Redhill, Surrey,

    Paxman, DH
    Principal scientists, Philips Research Laboratories, Redhill, Surrey,

    Slatter, JAG
    Principal scientists, Philips Research Laboratories, Redhill, Surrey,

    Pages: 11    Published: Jan 1980


    Abstract

    It has been shown that the on-state current-voltage characteristic of power pin diodes can be expressed in terms of base lifetime, τB; ratio of base width, W, to diffusion length, LA; and end-region recombination effects, hp and hn. The switching characteristic can be described in terms of a normalized form of these parameters, including the current density, JT, for a range of device dimensions. Independent experimental evaluation of these parameters, together with the theories, has accurately predicted the current-voltage characteristic up to 450 A cm−2 and confirmed the general behavior of the switching characteristics of a set of pin diodes with dimensions in the range 1.5 ≤ W/LA ≤ 4.

    Keywords:

    power semiconductor devices, switching time, diode recovery, current-voltage characteristic, silicon


    Paper ID: STP35126S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP35126S


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