SEDL / STP / STP712-EB / STP35126S

Effects of Carrier Lifetime and End-Region Recombination on the Forward Current and Switching Behavior of Power Pin Diodes

Cooper, RW
Senior physicists, Philips Research Laboratories, Redhill, Surrey,

Fagg, S
Senior physicists, Philips Research Laboratories, Redhill, Surrey,

Paxman, DH
Principal scientists, Philips Research Laboratories, Redhill, Surrey,

Slatter, JAG
Principal scientists, Philips Research Laboratories, Redhill, Surrey,

Pages: 11    Published: Jan 1980

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Abstract

It has been shown that the on-state current-voltage characteristic of power pin diodes can be expressed in terms of base lifetime, τ^B; ratio of base width, W, to diffusion length, L^A; and end-region recombination effects, hp and hn. The switching characteristic can be described in terms of a normalized form of these parameters, including the current density, J^T, for a range of device dimensions. Independent experimental evaluation of these parameters, together with the theories, has accurately predicted the current-voltage characteristic up to 450 A cm⁻² and confirmed the general behavior of the switching characteristics of a set of pin diodes with dimensions in the range 1.5 ≤ W/L^A ≤ 4.