SEDL / STP / STP850-EB / STP32682S

Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors: Application to GaAs

Yahagi, M
LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

Satoh, M
LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

Kuriyama, K
LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

Iwamura, K
LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

Kim, C
LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

Shiraishi, F
LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

Pages: 8    Published: Jan 1984

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Abstract

Neutron irradiation at a flux of 5 × 10¹¹ neutrons /cm² sec for 18 hr has been performed on n-type GaAs with 5.9 × 10⁻²Ω-cm (n= 2.1 × 10¹⁶/cm³). In annealing experiments for electrical properties, it is found that neutron irradiated-induced damages are removed by the annealing temperature at 800°C. The recovery of radiation damage is also confirmed from the improvement of photoluminescence for GaAs annealed at 800°C. The magnitude of the average displacement damage introduced during neutron irradiation is estimated to be 0.15 A by the measurement of Rutherford Backscattering channeling.