STP850: Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors: Application to GaAs

    Yahagi, M
    LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

    Satoh, M
    LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

    Kuriyama, K
    LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

    Iwamura, K
    LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

    Kim, C
    LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

    Shiraishi, F
    LecturerStudentAssociate ProfessorProfessorAssociate ProfessorAssociate Professor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo University, TokyoTokyoKanagawa,

    Pages: 8    Published: Jan 1984


    Abstract

    Neutron irradiation at a flux of 5 × 1011 neutrons /cm2 sec for 18 hr has been performed on n-type GaAs with 5.9 × 10−2Ω-cm (n= 2.1 × 1016/cm3). In annealing experiments for electrical properties, it is found that neutron irradiated-induced damages are removed by the annealing temperature at 800°C. The recovery of radiation damage is also confirmed from the improvement of photoluminescence for GaAs annealed at 800°C. The magnitude of the average displacement damage introduced during neutron irradiation is estimated to be 0.15 A by the measurement of Rutherford Backscattering channeling.

    Keywords:

    ion channeling, neutron irradiated GaAs, electrical properties, photoluminescence, displacement damage


    Paper ID: STP32682S

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP32682S


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