STP850

    Neutron Transmutation Doping of Semi-Insulating Czochralskigrown GaAs

    Published: Jan 1984


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    Abstract

    We have carried out neutron transmutation doping of undoped, initially semi-insulating, Czochralski-grown GaAs. We employed a series of nine neutron doses, which added between 2×1015 and 5×1017 cm−3 Ge and Se to the samples. Electron concentrations determined from Hall effect measurements on annealed samples with the three highest doses agree with the concentration of added Ge and Se within 5%, although the uncertainty in the measurements is 20%. These data are consistent with photoluminescence data which suggest 10% of the amphoteric Ge acts as an acceptor in the annealed material. Room temperature and temperature dependent Hall data place an upper limit of 4.9×1015 cm−3 on the concentration of donors of intermediate depth, consistent with our model for semi-insulating material.

    Keywords:

    neutron transmutation doping, gallium arsenide, electronic characterization, photoluminescence, semi-insulating


    Author Information:

    Hunter, AT
    faculty member, Hughes Research LaboratoriesTexas A&M University, MalibuCollege Station, CATX

    Young, MH
    faculty member, Hughes Research LaboratoriesTexas A&M University, MalibuCollege Station, CATX

    Winston, HV
    faculty member, Hughes Research LaboratoriesTexas A&M University, MalibuCollege Station, CATX

    Marsh, OJ
    faculty member, Hughes Research LaboratoriesTexas A&M University, MalibuCollege Station, CATX

    Hart, RR
    faculty member, Hughes Research LaboratoriesTexas A&M University, MalibuCollege Station, CATX


    Paper ID: STP32681S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32681S


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