SEDL / STP / STP850-EB / STP32681S

Neutron Transmutation Doping of Semi-Insulating Czochralskigrown GaAs

Hunter, AT
faculty member, Hughes Research LaboratoriesTexas A&M University, MalibuCollege Station, CATX

Young, MH
faculty member, Hughes Research LaboratoriesTexas A&M University, MalibuCollege Station, CATX

Winston, HV
faculty member, Hughes Research LaboratoriesTexas A&M University, MalibuCollege Station, CATX

Marsh, OJ
faculty member, Hughes Research LaboratoriesTexas A&M University, MalibuCollege Station, CATX

Hart, RR
faculty member, Hughes Research LaboratoriesTexas A&M University, MalibuCollege Station, CATX

Pages: 12    Published: Jan 1984

Download this paper for $25 PDF (136K)          View License Agreement
Abstract

We have carried out neutron transmutation doping of undoped, initially semi-insulating, Czochralski-grown GaAs. We employed a series of nine neutron doses, which added between 2×10¹⁵ and 5×10¹⁷ cm⁻³ Ge and Se to the samples. Electron concentrations determined from Hall effect measurements on annealed samples with the three highest doses agree with the concentration of added Ge and Se within 5%, although the uncertainty in the measurements is 20%. These data are consistent with photoluminescence data which suggest 10% of the amphoteric Ge acts as an acceptor in the annealed material. Room temperature and temperature dependent Hall data place an upper limit of 4.9×10¹⁵ cm⁻³ on the concentration of donors of intermediate depth, consistent with our model for semi-insulating material.