STP850: Effects of Hydrogen on Defects in Neutron Irradiated Silicon

    Du, YC
    Peking UniversityInstitute of Nuclear Energy Technique, Qinghua University, BeijingBeijing,

    Zhang, YF
    Peking UniversityInstitute of Nuclear Energy Technique, Qinghua University, BeijingBeijing,

    Meng, XT
    Peking UniversityInstitute of Nuclear Energy Technique, Qinghua University, BeijingBeijing,

    Pages: 9    Published: Jan 1984


    Abstract

    Effects of hydrogen on electrical properties and annealing behavior of radiation defects in N- and P-type Si (H) irradiated by neutron have been studied by DLTS, IR absorption, resistivity and minority carrier lifetime measurements. In as-grown and neutron irradiated Si (H), some Si -H IR bands and hydrogen-related deep centers have been observed. Because of hydrogen in silicon, the production rates of radiation defects decreased, and the passivation action of hydrogen emerged unambiguously at 200°c annealing temperature or higher. These cause the differences of annealing behavior of the resistivity and lifetime between Si(H) and Si(Ar).

    Keywords:

    neutron irradiation, defects, annealing behavior, hydrogen, passivation


    Paper ID: STP32680S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32680S


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