SYMPOSIA PAPER Published: 01 January 1984
STP32680S

Effects of Hydrogen on Defects in Neutron Irradiated Silicon

Source

Effects of hydrogen on electrical properties and annealing behavior of radiation defects in N- and P-type Si (H) irradiated by neutron have been studied by DLTS, IR absorption, resistivity and minority carrier lifetime measurements. In as-grown and neutron irradiated Si (H), some Si -H IR bands and hydrogen-related deep centers have been observed. Because of hydrogen in silicon, the production rates of radiation defects decreased, and the passivation action of hydrogen emerged unambiguously at 200°c annealing temperature or higher. These cause the differences of annealing behavior of the resistivity and lifetime between Si(H) and Si(Ar).

Author Information

Du, YC
Zhang, YF
Meng, XT
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Details
Developed by Committee: F01
Pages: 566–574
DOI: 10.1520/STP32680S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7