STP850

    Neutron Transmutation Doping in Hydrogenated Amorphous Silicon

    Published: Jan 1984


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    Abstract

    A neutron irradiation for thermal neutron flux density of 5 × 1011/cm2s and irradiation time of 10 hr was applied to hydrogenated amorphous silicon (a-Si:H). The density of 31P produced by the neutron transmutation doping (NTD) was estimated to be 1012/cm3. Dark and photo conductivities were measured before and after NTD in parallel with ESR measurements. The annealing behavior of the irradiation damage was studied up to the growth temperature of a-Si:H. Dark conductivity of the well-annealed NTD a-Si:H shows an activation type conduction above room temperature with activation energy of 0.69 eV.

    Keywords:

    neutron transmutation doping, hydrogenated amorphous silicon, dark and photo conductivities, electron spin resonance, activation energy


    Author Information:

    Hamanaka, H
    ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

    Kuriyama, K
    ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

    Yahagi, M
    ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

    Iwamura, K
    ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

    Kim, C
    ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

    Shiraishi, F
    ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

    Tsuji, K
    ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

    Minomura, S
    ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,


    Paper ID: STP32679S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32679S


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