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Neutron Transmutation Doping in Hydrogenated Amorphous Silicon


Pages: 8    Published: Jan 1984


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Source: STP850-EB


Abstract

A neutron irradiation for thermal neutron flux density of 5 × 1011/cm2s and irradiation time of 10 hr was applied to hydrogenated amorphous silicon (a-Si:H). The density of 31P produced by the neutron transmutation doping (NTD) was estimated to be 1012/cm3. Dark and photo conductivities were measured before and after NTD in parallel with ESR measurements. The annealing behavior of the irradiation damage was studied up to the growth temperature of a-Si:H. Dark conductivity of the well-annealed NTD a-Si:H shows an activation type conduction above room temperature with activation energy of 0.69 eV.


Keywords:
neutron transmutation doping, hydrogenated amorphous silicon, dark and photo conductivities, electron spin resonance, activation energy

Paper ID: STP32679S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP32679S
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