SEDL / STP / STP850-EB / STP32679S

Neutron Transmutation Doping in Hydrogenated Amorphous Silicon

Hamanaka, H
ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

Kuriyama, K
ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

Yahagi, M
ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

Iwamura, K
ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

Kim, C
ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

Shiraishi, F
ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

Tsuji, K
ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

Minomura, S
ResearcherAssociate ProfessorLecturerProfessorAssociate ProfessorAssociate ProfessorResearcherProfessor, College of Engineering and Research Center of Ion Beam Technology, Hosei UniversityKorea UniversityInstitute for Atomic Energy, Rikkyo UniversityInstitute for Solid State Physics, University of Tokyo, TokyoTokyoKanagawaTokyo,

Pages: 8    Published: Jan 1984

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Abstract

A neutron irradiation for thermal neutron flux density of 5 × 10¹¹/cm²s and irradiation time of 10 hr was applied to hydrogenated amorphous silicon (a-Si:H). The density of ³¹P produced by the neutron transmutation doping (NTD) was estimated to be 10¹²/cm³. Dark and photo conductivities were measured before and after NTD in parallel with ESR measurements. The annealing behavior of the irradiation damage was studied up to the growth temperature of a-Si:H. Dark conductivity of the well-annealed NTD a-Si:H shows an activation type conduction above room temperature with activation energy of 0.69 eV.