SEDL / STP / STP850-EB / STP32678S

Production of Detector-Grade Silicon by Neutron Transmutation Doping

Ammon, Wv
Wacker-Chemitronic GmbHFakultät für Physik, BurghausenGarching b. München,

Kemmer, J
Wacker-Chemitronic GmbHFakultät für Physik, BurghausenGarching b. München,

Pages: 12    Published: Jan 1984

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Abstract

High ohmic n-type silicon was produced from over-compensated, neutron transmutation doped P-type silicon. It was found that compensation levels of even more 70 % do not lead to the formation of p/n junctions across the wafer so that resistivities of up to 10 KOhmcm can be produced on a fairly reliable basis. The properties of NTD and conventionally doped silicon as well as their detector suitability are compared.