STP850

    Production of Detector-Grade Silicon by Neutron Transmutation Doping

    Published: Jan 1984


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    Abstract

    High ohmic n-type silicon was produced from over-compensated, neutron transmutation doped P-type silicon. It was found that compensation levels of even more 70 % do not lead to the formation of p/n junctions across the wafer so that resistivities of up to 10 KOhmcm can be produced on a fairly reliable basis. The properties of NTD and conventionally doped silicon as well as their detector suitability are compared.

    Keywords:

    detector grade silicon, neutron transmutation doping, overcompensation


    Author Information:

    Ammon, Wv
    Wacker-Chemitronic GmbHFakultät für Physik, BurghausenGarching b. München,

    Kemmer, J
    Wacker-Chemitronic GmbHFakultät für Physik, BurghausenGarching b. München,


    Paper ID: STP32678S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32678S


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