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Production and Development of Neutron Transmutation Doped Silicon Pages: 13 Published: Jan 1984
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View License Agreement Source: STP850-EB Abstract Considering the production of NTD-silicon our interest is focussing on market growth, application fields and questions like reactor capacity, costs and material quality. Market growth still is in a further steady increase and since IC application particularly CMOS devices are not expected to turn over to NTD-silicon there is plenty of reactor capacity available to follow the market increase in power device application. Further development of NTD-silicon is discussed regarding maximum diameter, upper resistivity limit and quality aspects. Keywords: float-zone silicon, neutron transmutation doping reactor capacity, maximum diameter, upper resistivity limit, crystal quality Paper ID: STP32677S Committee/Subcommittee: F01.06 DOI: 10.1520/STP32677S ASTM International is a member of CrossRef. | ||