SEDL / STP / STP850-EB / STP32677S



Production and Development of Neutron Transmutation Doped Silicon

Herzer, H
Manager Float-Zone Silicon, Wacker-Chemitronic GmbH, Burghausen,


Pages: 13    Published: Jan 1984


Download this paper for $25 PDF (176K)          View License Agreement
Abstract

Considering the production of NTD-silicon our interest is focussing on market growth, application fields and questions like reactor capacity, costs and material quality. Market growth still is in a further steady increase and since IC application particularly CMOS devices are not expected to turn over to NTD-silicon there is plenty of reactor capacity available to follow the market increase in power device application.

Further development of NTD-silicon is discussed regarding maximum diameter, upper resistivity limit and quality aspects.


Keywords:
float-zone silicon, neutron transmutation doping reactor capacity, maximum diameter, upper resistivity limit, crystal quality

Paper ID: STP32677S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP32677S
CrossRef ASTM International is a member of CrossRef.