SEDL / STP / STP850-EB / STP32670S

Comparison of Depth Profiling ¹⁰B in Silicon Using Spreading Resistance Profiling, Secondary Ion Mass Spectrometry, and Neutron Depth Profiling

Ehrstein, JR
Research PhysicistsResearch ChemistSenior Staff Scientist, National Bureau of StandardsMotorola Inc., Semiconductor Products Group, Washington, DCPhoenix, AZ

Downing, RG
Research PhysicistsResearch ChemistSenior Staff Scientist, National Bureau of StandardsMotorola Inc., Semiconductor Products Group, Washington, DCPhoenix, AZ

Stallard, BR
Research PhysicistsResearch ChemistSenior Staff Scientist, National Bureau of StandardsMotorola Inc., Semiconductor Products Group, Washington, DCPhoenix, AZ

Simons, DS
Research PhysicistsResearch ChemistSenior Staff Scientist, National Bureau of StandardsMotorola Inc., Semiconductor Products Group, Washington, DCPhoenix, AZ

Fleming, RF
Research PhysicistsResearch ChemistSenior Staff Scientist, National Bureau of StandardsMotorola Inc., Semiconductor Products Group, Washington, DCPhoenix, AZ

Pages: 17    Published: Jan 1984

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Abstract

Depth profiling of intentional dopants is an important measurement in the semiconductor industry both for process and device modeling and for process control. A comparison of ¹⁰B implants into silicon as measured by Spreading Resistance Profiling (SRP), Secondary Ion Mass Spectrometry (SIMS), and by Neutron Depth Profiling (NDP) is presented. The boron implantations were done at several fluences and energies into bare silicon and through several thicknesses of thermally grown oxides. Sources of error and their relation to observed differences among the techniques will be discussed.