SYMPOSIA PAPER Published: 01 January 1984
STP32669S

Dopant Profiling in Silicon

Source

The developments necessary to implement a comprehensive research programme aimed at understanding dopant incorporation in silicon are described. The two experimental techniques used, and possessing the required dynamic range and depth resolution, are high resolution Spreading Resistance and Secondary Ion Mass Spectrometry. Comparative studies of samples with both techniques lead to a greater understanding of dopant incorporation and dopant activation and provide a wealth of data for the refinement of process models such as SUPREM.

Data are presented on a number of different samples, including boron and arsenic implantations and anneals (furnace, and electron beam) in silicon and in silicon-on-sapphire.

Author Information

Pawlik, M
Price: $25.00
Contact Sales
Related
Reprints and Permissions
Reprints and copyright permissions can be requested through the
Copyright Clearance Center
Details
Developed by Committee: F01
Pages: 390–408
DOI: 10.1520/STP32669S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7