You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.


    A Method to Determine the Initial Phosphorus and Boron Concentrations in Float-Zoned Polysilicon Rods

    Published: Jan 1984

      Format Pages Price  
    PDF (144K) 11 $25   ADD TO CART
    Complete Source PDF (9.7M) 11 $66   ADD TO CART


    A simple method to determine the initial dopant concentrations in polycrystalline silicon rods used in the floating-zone process is described in this paper. The technique is to grow a single crystal in the taper region of the first float-zoned pass. The net carrier concentration, the concentration difference between the donor and acceptor, in the taper region is obtained by four-point probe resistivity measurements. From the slope of the net carrier concentration versus the distance plot in the taper region, the initial phosphorus and boron concentration are calculated. Experimental data show that the calculated values are in good agreement with the frozen-end average dopant concentrations measured on the second-pass zero-dislocation crystals.


    Polysilicon, initial dopants, phosphorus, boron, floating-zone

    Author Information:

    Chiou, H-D
    research specialist, Monsanto Electronic Materials Company, St. Peters, MO

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32667S

    CrossRef ASTM International is a member of CrossRef.