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A Study of the Spatial Distribution of the Oxygen Content in Silicon Wafers Using an Infrared Transmission Microscope Pages: 10 Published: Jan 1984
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View License Agreement Source: STP850-EB Abstract A new high sensitivity microsampling accessory incorporating an all-reflecting microscope for use with FT-IR instruments is described. Measurements of the interstitial oxygen and substitutional carbon concentrations in silicon from sampling areas as small as 100 μm × 100 μm are described. A reflectance version of the microsampling accessory has been used for mapping the epitaxial film thickness on silicon from areas as small as 50 μm × 50 μm. Keywords: Silicon analysis, oxygen and carbon determination, epitaxial film thickness, microsampling, FT-IR Paper ID: STP32663S Committee/Subcommittee: F01.06 DOI: 10.1520/STP32663S ASTM International is a member of CrossRef. | ||