STP850

    A Study of the Spatial Distribution of the Oxygen Content in Silicon Wafers Using an Infrared Transmission Microscope

    Published: Jan 1984


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    Abstract

    A new high sensitivity microsampling accessory incorporating an all-reflecting microscope for use with FT-IR instruments is described. Measurements of the interstitial oxygen and substitutional carbon concentrations in silicon from sampling areas as small as 100 μm × 100 μm are described. A reflectance version of the microsampling accessory has been used for mapping the epitaxial film thickness on silicon from areas as small as 50 μm × 50 μm.

    Keywords:

    Silicon analysis, oxygen and carbon determination, epitaxial film thickness, microsampling, FT-IR


    Author Information:

    Krishnan, K
    Applications ManagerSenior Engineer of Bio-Rad, Digilab Division, Cambridge, Massachusetts

    Kuehl, D
    Applications ManagerSenior Engineer of Bio-Rad, Digilab Division, Cambridge, Massachusetts


    Paper ID: STP32663S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32663S


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