SEDL / STP / STP850-EB / STP32663S

A Study of the Spatial Distribution of the Oxygen Content in Silicon Wafers Using an Infrared Transmission Microscope

Krishnan, K
Applications ManagerSenior Engineer of Bio-Rad, Digilab Division, Cambridge, Massachusetts

Kuehl, D
Applications ManagerSenior Engineer of Bio-Rad, Digilab Division, Cambridge, Massachusetts

Pages: 10    Published: Jan 1984

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Abstract

A new high sensitivity microsampling accessory incorporating an all-reflecting microscope for use with FT-IR instruments is described. Measurements of the interstitial oxygen and substitutional carbon concentrations in silicon from sampling areas as small as 100 μm × 100 μm are described. A reflectance version of the microsampling accessory has been used for mapping the epitaxial film thickness on silicon from areas as small as 50 μm × 50 μm.