STP850: Oxygen Determination in Silicon Using Fourier Transform Infrared Spectroscopy

    Shive, LW
    Senior Research Group LeaderResearch Technician, Monsanto Electronic Materials Company, St. Peters, Mo

    Schulte, BK
    Senior Research Group LeaderResearch Technician, Monsanto Electronic Materials Company, St. Peters, Mo

    Pages: 5    Published: Jan 1984


    Abstract

    Silicon wafer users must often test non-ideal one-side polished slices for oxygen content. This data is usually biased with respect to the true value. However, this bias can now be eliminated for some types of one-side polished wafers by using calibration programs that are provided with most commercial FTIR instruments. These programs require a calibration wafer of known oxygen content and with a thickness and a backside surface similar to those of the unknown. The effectiveness of this procedure for eliminating bias for several non-ideal sample types is described.

    Keywords:

    Silicon analysis, infrared spectroscopy, oxygen determination, calibration, Fourier transform


    Paper ID: STP32662S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32662S


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