STP850

    Oxygen Determination in Silicon Using Fourier Transform Infrared Spectroscopy

    Published: Jan 1984


      Format Pages Price  
    PDF Version (80K) 5 $25   ADD TO CART
    Complete Source PDF (9.7M) 5 $66   ADD TO CART


    Abstract

    Silicon wafer users must often test non-ideal one-side polished slices for oxygen content. This data is usually biased with respect to the true value. However, this bias can now be eliminated for some types of one-side polished wafers by using calibration programs that are provided with most commercial FTIR instruments. These programs require a calibration wafer of known oxygen content and with a thickness and a backside surface similar to those of the unknown. The effectiveness of this procedure for eliminating bias for several non-ideal sample types is described.

    Keywords:

    Silicon analysis, infrared spectroscopy, oxygen determination, calibration, Fourier transform


    Author Information:

    Shive, LW
    Senior Research Group LeaderResearch Technician, Monsanto Electronic Materials Company, St. Peters, Mo

    Schulte, BK
    Senior Research Group LeaderResearch Technician, Monsanto Electronic Materials Company, St. Peters, Mo


    Paper ID: STP32662S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32662S


    CrossRef ASTM International is a member of CrossRef.