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Oxygen Determination in Silicon Using Fourier Transform Infrared Spectroscopy Pages: 5 Published: Jan 1984
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View License Agreement Source: STP850-EB Abstract Silicon wafer users must often test non-ideal one-side polished slices for oxygen content. This data is usually biased with respect to the true value. However, this bias can now be eliminated for some types of one-side polished wafers by using calibration programs that are provided with most commercial FTIR instruments. These programs require a calibration wafer of known oxygen content and with a thickness and a backside surface similar to those of the unknown. The effectiveness of this procedure for eliminating bias for several non-ideal sample types is described. Keywords: Silicon analysis, infrared spectroscopy, oxygen determination, calibration, Fourier transform Paper ID: STP32662S Committee/Subcommittee: F01.06 DOI: 10.1520/STP32662S ASTM International is a member of CrossRef. | ||