SYMPOSIA PAPER Published: 01 January 1984
STP32659S

The Effect of Si-SiO Interface on the Excess Point Defect Distribution in Silicon

Source

Lateral diffusion enhancement of boron and phosphorus by excess point defects, excess interstitials during thermal oxidation of silicon and excess vacancies during high concentration phosphorus predeposition, has been investigated experimentally and numerically. Two-dimensional steady state excess point defect concentration profiles were obtained by a finite difference method. Numerical result was compared with the experimental data and the values of excess point defect recombination velocity (S) at the unoxidizing Si-SiO2 interface divided by the point defect bulk diffusivity (D), S/D, were found out to be about 0.7/μm for excess interstitials and about 1.3/μm for excess vacancies.

Author Information

Shin, Y-S
Kim, C-K
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Developed by Committee: F01
Pages: 283–293
DOI: 10.1520/STP32659S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7