STP850

    Extrinsic Gettering Via the Controlled Introduction of Misfit Dislocations

    Published: Jan 1984


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    Abstract

    As an alternative, or a complement, to existing gettering techniques, extrinsic gettering by misfit dislocations is described and the gettering efficiency evaluated. Uniform arrays of misfit dislocations were produced at epitaxial Si interfaces by introducing GeH4 into a SiH4/H2 epitaxial deposition system. The dislocation density was controlled by adjusting the magnitude of lattice mismatch due to the expansion of the Si matrix by Ge. The dislocation properties were determined using conventional and cross-section transmission electron microscopy and optical microscopy coupled with angle polishing and preferrential etching. The dislocation bands were found to be confined to the epi/substrate interface and were used as “extrinsic” gettering sinks. Surface metallic contamination was introduced deliberately and diffused towards the dislocations with a high temperature furnace operation. TEM analyses showed metallic precipitation at the dislocations as a result of gettering. Depth profiles of gold were determined by SIMS. The Au peaks were found to coincide with the dislocation bands and to be proportional to the dislocation density.

    Keywords:

    metallic impurities, extrinsic gettering, germanium concentration, misfit dislocations


    Author Information:

    Salih, ASM
    research assistantsProfessor, North Carolina State University, Raleigh, NC

    Kim, HJ
    research assistantsProfessor, North Carolina State University, Raleigh, NC

    Davis, RF
    research assistantsProfessor, North Carolina State University, Raleigh, NC

    Rozgonyi, GA
    research assistantsProfessor, North Carolina State University, Raleigh, NC


    Paper ID: STP32658S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32658S


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