STP850: Evaluation of Gettering Efficiency of Backside Damage by the Use of the “Haze” Test

    Domenici, M
    research scientists, D.N.S. Dynamit Nobel Silicon S.p.A., Novara,

    Ferrero, G
    research scientists, D.N.S. Dynamit Nobel Silicon S.p.A., Novara,

    Malinverni, P
    research scientists, D.N.S. Dynamit Nobel Silicon S.p.A., Novara,

    Pages: 15    Published: Jan 1984


    Abstract

    “Haze” test has been used to evaluate gettering efficiency on the wafers damaged by different techniques.

    The wafers have been partially back side damaged and then intention ally contaminated by “pure” contaminants, such as the most common 3d transition and noble metals.

    In the particular case of contamination by iron we are calibrating our qualitative results by parallel measurements using neutron activation analysis: this is done utilizing thermal as well as epithermal and fast neutrons to transmute Fe-54 into *Mn-54.

    Keywords:

    Silicon wafers, back side damage, gettering, contamination, haze/fog-test, heavy metals, Neutron Activation Analysis (NAA), transmutation reaction, Shallow Pits (SP)


    Paper ID: STP32657S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32657S


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