STP850

    Effects of Oxygen on Process-Induced Defects and Gettering in Cz-Silicon

    Published: Jan 1984


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    Abstract

    Process-induced defects (bulk stacking faults (BSF) and precipitate-defect clusters (PDC)), warp and minority lifetime have been investigated in silicon wafers with oxygen ranging from 10 to 33 ppma (ASTM F 121-79). The results indicate that the density of BSF and PDC decreased as the oxygen content decreased. The warp of as-polished wafers did not correlate with the oxygen concentration. Minority carrier lifetime measurements and DRAM yields achieved on very low oxygen wafers (<20 ppma) indicated that extrinsic gettering may be required to improve leakage current and sustain device yield in these wafers.

    Keywords:

    oxygen control, bulk stacking faults, precipitate-defect-clusters


    Author Information:

    Swaroop, RB
    Applications Manager, Siltec Corp., Silicon Division, Mt. View, CA


    Paper ID: STP32655S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32655S


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