SEDL / STP / STP850-EB / STP32653S

The Effects of Wafer Thermal History on the 450°C Thermal Donor Formation in Cz- Grown P(100) Silicon

Borland, JO
Applied Materials, Inc., Santa Clara, CA

Pages: 18    Published: Jan 1984

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Abstract

The rate and concentration of thermal donors generated during 450°C anneals were observed to be dependent on wafer thermal history. Oxygen thermal donors formed by the silicon-vacancy and silicon interstitial models were examined and the silicon-interstitial donor formation was observed to be the dominating mechanism for the 450°C oxygen thermal donor. Thermally induced microdefects were also observed. Depending on the wafer thermal history less than 1 × 10¹⁴ donors/cm³ to as much as 3.7 × 10¹⁴ donors/cm³ were formed during the 450°C anneals.