STP850: Edge-Controlled, Self-Consistent Proximity Effect Corrections

    Berkowitz, HL
    research physical scientistschemistelectrical engineer, US Army Electronics Technology and Devices Laboratory (ERADCOM), Fort Monmouth, New Jersey

    Cook, CF
    research physical scientistschemistelectrical engineer, US Army Electronics Technology and Devices Laboratory (ERADCOM), Fort Monmouth, New Jersey

    Kwiatkowski, JH
    research physical scientistschemistelectrical engineer, US Army Electronics Technology and Devices Laboratory (ERADCOM), Fort Monmouth, New Jersey

    Goodreau, WM
    research physical scientistschemistelectrical engineer, US Army Electronics Technology and Devices Laboratory (ERADCOM), Fort Monmouth, New Jersey

    Pages: 19    Published: Jan 1984


    Abstract

    A new method for correcting electron-beam lithography pattern data for proximity effects is presented. The method calculates the average dose received by each partition exterior edge to be equal to the critical dose necessary for proper exposure. This method minimizes the number of partitioned rectangles required for acceptable lithography, thus greatly reducing CPU time. Electron-beam dose averages are not only determined for critical edges where exposure conditions are stringent, but also for the rest of the partitioned edges where tolerances are more relaxed. Both simulated and experimental results will be presented.

    Keywords:

    electron-beam, lithography, proximity effect


    Paper ID: STP32648S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32648S


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