A new method for correcting electron-beam lithography pattern data for proximity effects is presented. The method calculates the average dose received by each partition exterior edge to be equal to the critical dose necessary for proper exposure. This method minimizes the number of partitioned rectangles required for acceptable lithography, thus greatly reducing CPU time. Electron-beam dose averages are not only determined for critical edges where exposure conditions are stringent, but also for the rest of the partitioned edges where tolerances are more relaxed. Both simulated and experimental results will be presented.