STP850

    Edge-Controlled, Self-Consistent Proximity Effect Corrections

    Published: Jan 1984


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    Abstract

    A new method for correcting electron-beam lithography pattern data for proximity effects is presented. The method calculates the average dose received by each partition exterior edge to be equal to the critical dose necessary for proper exposure. This method minimizes the number of partitioned rectangles required for acceptable lithography, thus greatly reducing CPU time. Electron-beam dose averages are not only determined for critical edges where exposure conditions are stringent, but also for the rest of the partitioned edges where tolerances are more relaxed. Both simulated and experimental results will be presented.

    Keywords:

    electron-beam, lithography, proximity effect


    Author Information:

    Berkowitz, HL
    research physical scientistschemistelectrical engineer, US Army Electronics Technology and Devices Laboratory (ERADCOM), Fort Monmouth, New Jersey

    Cook, CF
    research physical scientistschemistelectrical engineer, US Army Electronics Technology and Devices Laboratory (ERADCOM), Fort Monmouth, New Jersey

    Kwiatkowski, JH
    research physical scientistschemistelectrical engineer, US Army Electronics Technology and Devices Laboratory (ERADCOM), Fort Monmouth, New Jersey

    Goodreau, WM
    research physical scientistschemistelectrical engineer, US Army Electronics Technology and Devices Laboratory (ERADCOM), Fort Monmouth, New Jersey


    Paper ID: STP32648S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32648S


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