STP850

    A Study of Strain in Ion Implanted Silicon

    Published: Jan 1984


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    Abstract

    Lattice strain in phosphorus ion implanted silicon has been investigated by the double crystal x-ray rocking curve measurements. The kinematical model for x-ray diffraction was applied to estimate lattice strain of silicon. It was found that the measured maximum strain is not dose-dependent for implanted dose range of 1 to 5 × 1016/cm2. The non-linearity of the relation between the measured maximum strain and the dose was explained by lattice disorder in the highly dosed samples.

    The dependancy of maximum strain on the annealing atmosphere (oxygen partial pressure in a mixture of oxygen and nitrogen) was also investigated and it was found that the maximum strain decreases as the oxygen partial pressure (O2/O2+N2) increases. In the case of nitrogen annealing, a relatively large lattice contraction coefficient β =3 × 10−24 cm3/atom was obtained. In the case of oxygen annealing, the lattice contraction coefficient was 1.9 × 10−24 cm3/atom.

    Keywords:

    lattice strain, double crystal x-ray diffraction, kinematical theory, ion implantation


    Author Information:

    Sasaki, M
    process engineers at the electron device division, OKI Electric Industry Co., Ltd., Tokyo,

    Sakamoto, K
    process engineers at the electron device division, OKI Electric Industry Co., Ltd., Tokyo,


    Paper ID: STP32646S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32646S


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