Published: Jan 1984
| ||Format||Pages||Price|| |
|PDF (128K)||11||$25||  ADD TO CART|
|Complete Source PDF (9.7M)||664||$66||  ADD TO CART|
Vertical and lateral autodoping in silicon epitaxy deposited in a vertical pancake type reactor using dichlorosilane has been examined as a function of pre-epitaxial bake cycle, dopant type, and growth parameters. Phosphorus and arsenic were used as dopant elements to form a localized buried layer at the center of substrates. The results show that higher prebake temperature produces more lateral autodoping for phosphorus while the opposite holds for arsenic. Autodoping in both vertical and lateral directions decreases with increasing prebake time. A continual decrease in autodoping was found with increasing growth rate for phosphorus while for arsenic, only slight difference was noticed in the growth rate range studied. Both phosphorus and arsenic show a similar trend on the deposition temperature dependence of autodoping, i.e., autodoping decreases at first, then increases with increasing temperature.
silicon epitaxy, vertical reactor, autodoping, buried layer, prebake cycle
chemical engineer, General Electric Company, Corporate Research and Development, Schenectady, NY