Predamage Threshold Electron Emission from Insulator and Semiconductor Surfaces

SEDL / STP / STP911-EB / STP28999S

Predamage Threshold Electron Emission from Insulator and Semiconductor Surfaces

Siekhaus, WJ
Lawrence Livermore National Laboratory, Livermore, California

Kinney, JH
Lawrence Livermore National Laboratory, Livermore, California

Milam, D
Lawrence Livermore National Laboratory, Livermore, California

Pages: 6 Published: Jan 1985

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Abstract

Predamage electron emission shows a dependence on fluence, bandgap and wavelength consistent with multiphoton excitation across the bandgap and inconsistent with avalanche ionization and thermionic emission models. The electron emission scales with pulselength as τ^−1/2.

Keywords:
GeO, 2, laser damage, multiphoton excitation, predamage electron emission, pulselength scaling, SiO, 2, ZnS

Paper ID: STP28999S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP28999S

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