STP911

    Predamage Threshold Electron Emission from Insulator and Semiconductor Surfaces

    Published: Jan 1985


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    Abstract

    Predamage electron emission shows a dependence on fluence, bandgap and wavelength consistent with multiphoton excitation across the bandgap and inconsistent with avalanche ionization and thermionic emission models. The electron emission scales with pulselength as τ−1/2.

    Keywords:

    GeO, 2, laser damage, multiphoton excitation, predamage electron emission, pulselength scaling, SiO, 2, ZnS


    Author Information:

    Siekhaus, WJ
    Lawrence Livermore National Laboratory, Livermore, California

    Kinney, JH
    Lawrence Livermore National Laboratory, Livermore, California

    Milam, D
    Lawrence Livermore National Laboratory, Livermore, California


    Paper ID: STP28999S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP28999S


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