SYMPOSIA PAPER Published: 01 January 1981
STP28242S

Helium Bubble Growth in Vanadium

Source

Helium bubble growth in vanadium has been investigated during postimplantation annealing at 950°C. The gas was introduced into 100-μm-thick specimens at room temperature by sequential ion implantation at 220, 140, 120, and 50 keV. This treatment provided a helium concentration of 5 × 1026 atoms/m3 at depths between 200 and 700 nm from the implanted surface. Subsequent vacuum-annealing (at better than 5 × 10−7 torr) allowed the determination of the bubble growth mechanism, and controlling kinetics, from the variation of the characteristic bubble size with time at temperature. Bubbles produced during annealing were faceted on {100} at all times and their growth occurred by migration and coalescence. Bubble mobility is limited by the nucleation of atomic ledges on a bubble facet, and the energy, ε, per unit length of ledge is deduced to lie between 3.4 × 10−11 and 3.8 × 10−11J/m. This parameter is recognized to be particularly sensitive to the composition and cleanliness of the bubble surface.

Author Information

Tyler, SK
University of Surrey, Guildford, U.K.
Goodhew, PJ
University of Surrey, Guildford, U.K.
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Details
Developed by Committee: E10
Pages: 654–662
DOI: 10.1520/STP28242S
ISBN-EB: 978-0-8031-4794-2
ISBN-13: 978-0-8031-0755-7