STP725

    Helium Bubble Growth in Vanadium

    Published: Jan 1981


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    Abstract

    Helium bubble growth in vanadium has been investigated during postimplantation annealing at 950°C. The gas was introduced into 100-μm-thick specimens at room temperature by sequential ion implantation at 220, 140, 120, and 50 keV. This treatment provided a helium concentration of 5 × 1026 atoms/m3 at depths between 200 and 700 nm from the implanted surface. Subsequent vacuum-annealing (at better than 5 × 10−7 torr) allowed the determination of the bubble growth mechanism, and controlling kinetics, from the variation of the characteristic bubble size with time at temperature. Bubbles produced during annealing were faceted on {100} at all times and their growth occurred by migration and coalescence. Bubble mobility is limited by the nucleation of atomic ledges on a bubble facet, and the energy, ε, per unit length of ledge is deduced to lie between 3.4 × 10−11 and 3.8 × 10−11J/m. This parameter is recognized to be particularly sensitive to the composition and cleanliness of the bubble surface.

    Keywords:

    vanadium, helium bubbles, ion implantation, radiation damage, migration, coalescence


    Author Information:

    Tyler, SK
    Research fellow and professor, University of Surrey, Guildford,

    Goodhew, PJ
    Research fellow and professor, University of Surrey, Guildford,


    Paper ID: STP28242S

    Committee/Subcommittee: E10.02

    DOI: 10.1520/STP28242S


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