STP1117

    Photoconductivity of ZnS and ZnSe

    Published: Jan 1990


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    Abstract

    ZnS and ZnSe are important materials for laser windows and optical thinfilm coatings. Understanding the laser-induced damage mechanism in optical materials provides the ability to make improved damage-resistant materials. Photoconductivity (PC) techniques have demonstrated the capability to provide information on carrier production that can lead to electron avalanche by single or multiple photon absorption processes produced by a high-intensity laser beam. A study of the linear PC using a monochromated Xe lamp and the nonlinear PC using various lasers as excitation sources will be presented for chemically vapor-deposited ZnS and ZnSe.

    Keywords:

    charge-production, CVD ZnS, CVD ZnSe, electron avalanche, impurity absorption, laser-induced damage, multiphoton absorption, photoconductivity


    Author Information:

    Mason, BE
    Naval Weapons Center, China Lake, California

    Marrs, CD
    Naval Weapons Center, China Lake, California


    Paper ID: STP26526S

    Committee/Subcommittee: E13.15

    DOI: 10.1520/STP26526S


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